B3 - From mechanistic investigations on hBN growth to uniform mono- and multilayers on centimeter scale
Principle Investigator: Prof. Sanjay Mathur
This project aims to understand the mechanistic details of the growth of h-BN monolayers via Atomic Layer Deposition (ALD) and Pulsed-injection Chemical Vapor Deposition (PI-CVD) with complementary B and N precursors and single-source Precursors. These techniques allow a precise control over thickness and high aerial uniformity on a centimeter scale. The depositions on metal (Cu), semiconductor (Si) and dielectric (SiO2) surfaces will be investigated as well as the exfoliation and bubble-transfer of h-BN thin films will be tailored for different applications.
 V. Brune, C. Hegemann, S. Mathur, Inorg. Chem. 58, 9922 (2019).
 M. M. Straub, J. Leduc, M. Frank, A. Raauf, T. Lohrey, S. Minasian, S. Mathur, J. Arnold, Angew. Chem. Int. Ed. 58, 5749 (2019).
 A. Sasinska, D. Ritschel, L. Czympiel, S. Mathur, Adv. Energ. Mater. 19, 1600593 (2017).