B3.1 - From mechanistic investigations on hBN growth to uniform mono- and multilayers on centimeter scale
Principle Investigator: Prof. Sanjay Mathur
This project aims to understand the mechanistic details of the growth of h-BN monolayers via Atomic Layer Deposition (ALD) and Pulsed-injection Chemical Vapor Deposition (PI-CVD) with complementary B and N precursors and single-source Precursors. These techniques allow a precise control over thickness and high aerial uniformity on a centimeter scale. The depositions on metal (Cu), semiconductor (Si) and dielectric (SiO2) surfaces will be investigated as well as the exfoliation and bubble-transfer of h-BN thin films will be tailored for different applications.
References
[1] V. Brune, C. Hegemann, S. Mathur, Inorg. Chem. 58, 9922 (2019).
[2] M. M. Straub, J. Leduc, M. Frank, A. Raauf, T. Lohrey, S. Minasian, S. Mathur, J. Arnold, Angew. Chem. Int. Ed. 58, 5749 (2019).
[3] A. Sasinska, D. Ritschel, L. Czympiel, S. Mathur, Adv. Energ. Mater. 19, 1600593 (2017).